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中文字数:3198,中文页数:4 英文字数:2315页数:8
This paper presents a monolithic chemical gas sensor system fabricated in industrial CMOS- technology combined with post-CMOS micromachining. The system comprises metal -oxide-covered (SnO2) micro-hotplates and the necessary driving and signal-conditioning circuitry. The SnO2 sensitive layer is operated at temperatures between 200 and 350◦C. The on-chip temperature controller regulates the temperature of the membrane up to 350◦C with a resolution of 0.5◦C. A special heater-design was developed in order to achieve membrane temperatures up to 350◦C with 5 V supply voltage. The heater design also ensures a homogeneous temperature distribution over the heated area of the hotplate (1–2% maximum temperature fluctuation). Temperature sensors, on- and off-membrane (near the circuitry), show an excellent thermal isolation between the heated membrane area and the circuitry-area on the bulk chip (chip temperature rises by max 6◦C at 350◦C membrane temperature). A logarithmic converter was
本文提出了一种关于单片机的化学气体传感器系统，其制造工艺CMOS技术结合了CMOS微处理技术。该系统包括金属氧化物覆盖（二氧化锡）微型热板、必要的驱动器及信号调节电路。二氧化锡层的敏感操作温度在200--350 ◦C之间，在芯片上的温度控制器调节温度膜高达350 ◦ C，特别带有0.5 ◦C的加热器设计，用来实现膜温度达到350 ◦ C、供电电压达到5伏的目的。加热器的这种设计是为了使热板在加热的过程中温度能够均匀分布均匀受热（最高温度在1-2％波动）。温度传感器，内外膜是良好的热绝缘膜，它之间的的电路面积及大部分芯片在350 ◦ C膜温度时，芯片温度上升的最大值6 ◦ C。对数转换器包含了测量电阻变化时二氧化锡气体泄漏的一系列4个数量级。一个模拟硬件描述语言（AHDL）模型膜发展使模拟系统完整化。气体检测证明，试验中的气体检测浓度有所限制，二氧化碳低于1浓度和甲烷浓度低于100 。
